Chemically and electronically active metal ions on InAs quantum dots for infrared detectors

Abstract Colloidal InAs quantum dots (QDs) are emerging candidates for NIR-SWIR optoelectronic applications because of their excellent electrical and optical properties. However, the syntheses QDs, which demand strongly reducing atmospheres or highly reactive precursors, difficult covalent bonding lack Group 15 precursors. While coreduction method with commercially available arsenic precursors enables facile it results in broad size distributions requiring subsequent size-selection processes. In this study, we introduced zinc ions form coordination complexes during indium The Zn chemically passivated surfaces narrowed distribution removed surface defects. When QDs were integrated into infrared photodiodes as IR absorbers, surface-attached electrically modulated energy level carrier concentration. Infrared InAs:Zn QD layers exhibited dark currents photoresponses that two orders magnitude lower approximately twice fast, respectively, those seen bare QDs.